.::Mono- & Multysilicon::.
Wafer

• 125*125 & 156*156 mm, A Class & B Class
• Technique of Ingot Formation CZ
• Conductivity Type P (Bor)
• Specific Resistivity 0,5-3.0 & 3,0 – 6,0 Ohm*cm
• Oxygen <1*1018 at/cm3
• Carbon < 8*1016 at/cm3
• Lifetime in Bulk by microwave photoconductive method >10,0µsec
• Thickness 200 +/-30 µm
• TTV:5 Point center and 10mm from edge <50 µm
• Quantity 100 000 pieces per month available